Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Classification of electronic componentsDescription: MOSFET Transistor, N Channel, 1.2A, 30V, 0.185Ω, 4.5V, 1V6314
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Category: Bipolar transistorDescription: High voltage transistor, Nexperia # # # bipolar transistor, Nexperia4602
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Category: Bipolar transistorDescription: High voltage transistor, Nexperia # # # bipolar transistor, Nexperia7480
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Category: Bipolar transistorDescription: Small signal NPN transistor, Infineon # # # bipolar transistor, Infineon5765
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Category: Zener diodeDescription: Zener diode 250mW, PLVA6xxA series, Nexperia low-noise # # Zener diode, Nexperia5858
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Category: Zener diodeDescription: Zener diode 250mW, PLVA6xxA series, Nexperia low-noise # # Zener diode, Nexperia2608
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Category: Classification of electronic componentsDescription: Static protection device, TVS, 5.6 V, SOT-23, 3 pins9743
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Category: Bipolar transistorDescription: Double resistor digital NPN transistor, Nexperia # # # digital transistor, Nexperia bipolar transistor equipped with resistor, also known as digital transistor or bias resistor transistor, contains one or two integrated resistors. A single series input resistor, or a voltage divider with two resistors, can directly drive these devices from a digital source. Provide single and dual transistor models.5504
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Category: Bipolar transistorDescription: Double resistor digital PNP transistor, Nexperia # # # digital transistor, Nexperia bipolar transistor equipped with resistor, also known as digital transistor or bias resistor transistor, contains one or two integrated resistors. A single series input resistor, or a voltage divider with two resistors, can directly drive these devices from a digital source. Provide single and dual transistor models.8685
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Category: Classification of electronic componentsDescription: Trans GP BJT NPN 40V 2A Automotive 3Pin TO-236AB5386
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Category: Bipolar transistorDescription: Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia3628
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Category: Bipolar transistorDescription: High voltage transistor, Nexperia # # # bipolar transistor, Nexperia8605
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Category: Bipolar transistorDescription: Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia7902
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Category: TVSdiodeDescription: MMBZ Series, low capacitance dual channel ESD protection diode, Nexperia unidirectional dual channel electrostatic discharge (ESD) protection diode, common anode configuration, using SOT23 (TO-236AB) small surface mount device (SMD) plastic packaging. ###Transient voltage suppressor, Nexperia9949
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Category: MOSpipeDescription: N Channel MOSFET, 60V to 80V, Nexperia # # MOSFET transistor, NXP Semiconductors2534
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Category: Bipolar transistorDescription: 低饱和电压 NPN 晶体管,Nexperia 一系列 NXP BISS(小信号的重大突破)低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量,采用紧凑的空间节省型封装。 这些晶体管减少损失,可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管,Nexperia3335
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Category: Schottky diodeDescription: 肖特基势垒二极管,200mA 至 500mA,Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流5866
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Category: Classification of electronic componentsDescription: 静电放电(ESD)保护器件 PESD2CANFD27V-TR SOT-231265
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Category: Voltage reference chipDescription: 并联电压基准,可调,TL 系列 ### 电压参考,Texas Instruments 精密固定和可调电压参考 IC 利用串联、并联或串联/并联拓扑,并提供通孔和表面安装封装。 电压参考的初始准确度为 ±0.02 至 ±2%。3487
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Category: Classification of electronic componentsDescription: 晶体管, MOSFET, 沟, N沟道, 270 mA, 60 V, 2.2 ohm, 10 V, 1.6 V3483
